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? 2006 fairchild semiconductor corporation www.fairchildsemi.com FSQ0170RNA, fsq0270rna, fs q0370rna green mode fairch ild power switch (fps?) december 2006 FSQ0170RNA, fsq0270rna, fsq0370rna rev. 1.0.1 fps tm is a trademark of fairchild semiconductor corporation. FSQ0170RNA, fsq0270rna, fsq0370rna green mode fairchild power switch (fps?) features ? internal avalanche rugged 700v sensefet ? consumes only 0.8w at 230 v ac & 0.5w load with burst-mode operation ? precision fixed operating frequency, 100khz ? internal start-up circuit and built-in soft-start ? pulse-by-pulse current limiting and auto-restart mode ? over-voltage protection (ovp), overload protection (olp), internal thermal shutdown function (tsd) ? under-voltage lockout (uvlo) ? low operating current (3ma) ? adjustable peak current limit applications ? auxiliary power supply for pc and server ? smps for vcr, svr, stb, dvd & dvcd player, printer, facsimile & scanner ? adapter for camcorder related application notes ? an-4134: design guidelines for off-line forward converters using fairchild power switch (fps?) ? an-4137: design guidelines for off-line flyback converters using fairchild power switch (fps?) ? an-4141: troubleshooting and design tips for fairchild power switch (f ps?) flyback applications ? an-4147: design guidelines for rcd snubber of flyback ? an-4148: audible noise reduction techniques for fps? applications description the FSQ0170RNA, fsq0270rna, fsq0370rna consists of an integrated current mode pulse width modulator (pwm) and an avalanche-rugged 700v sense fet. it is specifically designed for high-performance off- line switch mode power supplies (smps) with minimal external components. the integrated pwm controller features include: a fixed-fre quency generating oscillator, under-voltage lockout (uvlo) protection, leading edge blanking (leb), an optimized gate turn-on/ turn-off driver, thermal shutdown (tsd) protection, and temperature compensated prec ision current sources for loop compensation and fault protection circuitry. compared to a discrete mosfet and controller or rcc switching converter solu tion, the FSQ0170RNA, fsq0270rna, fsq0370rna reduces total component count, design size, and weight while increasing efficiency, productivity, and system reliability. these devices provide a basic platform that is well suited for the design of cost-effective flyback converters, as in pc auxiliary power supplies. ordering information 8-dip product number package marking code bv dss f osc r ds(on) (max.) FSQ0170RNA 8dip q0170r 700v 100khz 11 fsq0270rna 8dip q0270r 700v 100khz 7.2 fsq0370rna 8dip q0370r 700v 100khz 4.75
FSQ0170RNA, fsq0270rna, fs q0370rna green mode fairch ild power switch (fps?) ? 2006 fairchild semiconductor corporation www.fairchildsemi.com FSQ0170RNA, fsq0270rna, fsq0370rna rev. 1.0.1 2 application diagram figure 1. typical flyback application output power table (1) notes: 1. the maximum output power can be limited by junc tion temperature. 2. 230 v ac or 100/115 v ac with doubler. 3. typical continuous power in a non-v entilated enclosed adapter with sufficient drain pattern as a heat sink, at 50 c ambient. 4. maximum practical continuous power in an open-frame des ign with sufficient drain pattern as a heat sink, at 50 c ambient. internal block diagram figure 2. internal block diagram product 230v ac 15% (2) 85?265v ac adapter (3) open frame (4) adapter (3) open frame (4) FSQ0170RNA 14w 20w 9w 13w fsq0270rna 17w 24w 11w 16w fsq0370rna 20w 27w 13w 19w drain gnd v str fb v cc pwm ac in dc out i pk fsq0x70rna rev. 1.01 8v/12v v ref internal bias s q q r osc v cc i delay i fb v sd tsd v ovp soft-start s q q r r 2.5r v cc good v cc drain fb gnd gate driver v str i ch v burl /v burh leb i pk burst normal pwm v cc v cc v cc good 1 2 5 6,7,8 3 4 fsq0x70rna rev. 1.00
FSQ0170RNA, fsq0270rna, fs q0370rna green mode fairch ild power switch (fps?) ? 2006 fairchild semiconductor corporation www.fairchildsemi.com FSQ0170RNA, fsq0270rna, fsq0370rna rev. 1.0.1 3 pin configuration figure 3. pin configuration (top view) pin definitions pin # name description 1gnd ground. sensefet source terminal on primary side and internal control ground. 2v cc power supply. positive supply voltage input. although connected to an aux- iliary transformer winding, current is supplied from pin 5 (v str ) via an internal switch during start-up, see figure 2. it is not until v cc reaches the uvlo upper threshold (12v) that the internal start-up switch opens and device power is supplied via the auxiliary transformer winding. 3fb feedback. the feedback voltage pin is the non-inverting input to the pwm comparator. it has a 0.9ma current sour ce connected internally while a capac- itor and opto-coupler are typically connected externally. a feedback voltage of 6v triggers overload protection (olp). ther e is a time delay while charging ex- ternal capacitor c fb from 3v to 6v using an internal 5a current source. this time delay prevents false triggering under transient conditions, but still allows the protection mechanism to operate under true overload conditions. 4i pk peak current limit. this pin adjusts the peak current limit of the sensefet. the 0.9ma feedback current source is di verted to the parallel combination of an internal 2.8k resistor and any external resistor to gnd on this pin. this determines the peak current limit. if this pin is tied to v cc or left floating, the typical peak current limit is 0.8a (FSQ0170RNA), 0.9a (fsq0270rna), or 1.1a (fsq0370rna). 5v str start-up. this pin connects to the rectifi ed ac line voltage source. at start-up, the internal switch supplies internal bias and charges an external storage ca- pacitor placed between the v cc pin and ground. once the v cc reaches 12v, the internal switch is opened. 6drain sensefet drain. high-voltage power sensefet drain connection. 7drain sensefet drain. high-voltage power sensefet drain connection. 8drain sensefet drain. high-voltage power sensefet drain connection. gnd v cc i pk v str 8-dip fb d d d fsq0x70rna rev. 1.00
FSQ0170RNA, fsq0270rna, fs q0370rna green mode fairch ild power switch (fps?) ? 2006 fairchild semiconductor corporation www.fairchildsemi.com FSQ0170RNA, fsq0270rna, fsq0370rna rev. 1.0.1 4 absolute maximum ratings the ?absolute maximum ratings? are those values beyond wh ich the safety of the device cannot be guaranteed. the device should not be operated at these limits. the parametric values defined in the electrical characteristics tables are not guaranteed at the absolute maximum ratings. t a = 25c, unless otherwise specified. thermal impedance t a = 25 c, unless otherwise specified. all items are test ed with the standards jesd 51-2 and 51-10 (dip). notes: 5. non-repetitive rating: pulse width is lim ited by maximum junction temperature. 6. l = 51mh, starting t j = 25 c. 7. free standing with no heatsi nk; without copper clad. (measurement condition - ju st before junction temperature t j enters into otp.) 8. measured on the drain pin close to plastic interface. 9. measured on the pkg top surface. symbol characteristic value unit v drain drain pin voltage 700 v v str vstr pin voltage 700 v i dm drain current pulsed (5) FSQ0170RNA 4 a fsq0270rna 8 a fsq0370rna 12 a e as single pulsed avalanche energy (6) FSQ0170RNA 50 mj fsq0270rna 140 mj fsq0370rna 230 mj v cc supply voltage 20 v v fb feedback voltage range -0.3 to v cc v p d total power dissipation 1.5 w t j operating junction temperature internally limited c t a operating ambient temperature -25 to +85 c t stg storage temperature -55 to +150 c symbol parameter value unit ja junction-to-ambient thermal resistance (7) 80 c/w jc junction-to-case thermal resistance (8) 20 c/w jt junction-to-top thermal resistance (9) 35 c/w
FSQ0170RNA, fsq0270rna, fs q0370rna green mode fairch ild power switch (fps?) ? 2006 fairchild semiconductor corporation www.fairchildsemi.com FSQ0170RNA, fsq0270rna, fsq0370rna rev. 1.0.1 5 electrical characteristics t a = 25 c unless otherwise specified. symbol parameter condition min. typ. max. unit sensefet section (10) i dss zero-gate-voltage drain current v ds = 700v, v gs = 0v 50 a v ds = 560v, v gs = 0v, t c = 125 c 200 r ds(on) drain-source on-state resistance (11) FSQ0170RNA v gs = 10v, i d = 0.5a 8.8 11 w fsq0270rna 6.0 7.2 fsq0370rna 4.0 4.75 c iss input capacitance FSQ0170RNA v gs = 0v, v ds = 25v, f = 1mhz 250 pf fsq0270rna 550 fsq0370rna 315 c oss output capacitance FSQ0170RNA 25 fsq0270rna 38 fsq0370rna 47 c rss reverse transfer capacitance FSQ0170RNA 10 fsq0270rna 17 fsq0370rna 9 t d(on) turn-on delay time FSQ0170RNA v ds = 350v, i d = 1.0a 12 ns fsq0270rna 20 fsq0370rna 11.2 t r rise time FSQ0170RNA 4 fsq0270rna 15 fsq0370rna 34 t d(off) turn-off delay time FSQ0170RNA 30 fsq0270rna 55 fsq0370rna 28.2 t f fall time FSQ0170RNA 10 fsq0270rna 25 fsq0370rna 32 control section f osc switching frequency 92 100 108 khz f osc switching frequency variation (10) -25 c t a 85 c5 10 % d max maximum duty cycle measured at 0.1 x v ds 55 60 65 % d min minimum duty cycle 0 0 0 % v start uvlo threshold voltage v fb = gnd 11 12 13 v v stop v fb = gnd 7 8 9 i fb feedback source current v fb = gnd 0.7 0.9 1.1 ma t s/s internal soft-start time (10) v fb = 4v 10 ms
FSQ0170RNA, fsq0270rna, fs q0370rna green mode fairch ild power switch (fps?) ? 2006 fairchild semiconductor corporation www.fairchildsemi.com FSQ0170RNA, fsq0270rna, fsq0370rna rev. 1.0.1 6 electrical characteristics (continued) t a = 25 c unless otherwise specified. notes: 10. these parameters, alt hough guaranteed, are not 100 % tested in production. 11. pulse test: pulse width 300s, duty 2%. symbol parameter condition min. typ. max. unit burst-mode section v burh burst-mode voltage t j = 25 c 0.5 0.6 0.7 v v burl 0.3 0.4 0.5 v v bur(hys) 100 200 300 mv protection section i lim peak current limit FSQ0170RNA di/dt = 170ma/s 0.70 0.80 0.90 a fsq0270rna di/dt = 200ma/s 0.79 0.90 1.01 fsq0370rna di/dt = 240ma/s 0.97 1.10 1.23 t cld current limit delay time (10) 500 ns t sd thermal shutdown temperature (10) 125 140 c v sd shutdown feedback voltage 5.5 6.0 6.5 v v ovp over-voltage protection 18 19 v i delay shutdown delay current v fb = 4v 3.5 5.0 6.5 a t leb leading edge blanking time (10) 200 ns total device section i op operating supply current (control part only) v cc = 14v 1 3 5 ma i ch start-up charging current v cc = 0v 0.70 0.85 1.00 ma v str v str supply voltage v cc = 0v 24 v
FSQ0170RNA, fsq0270rna, fs q0370rna green mode fairch ild power switch (fps?) ? 2006 fairchild semiconductor corporation www.fairchildsemi.com FSQ0170RNA, fsq0270rna, fsq0370rna rev. 1.0.1 7 typical performance characteristics (control part) these characteristic graphs are normalized at t a = 25c. figure 4. operating frequency (f osc ) vs. t a figure 5. over-voltage protection (v ovp ) vs. t a figure 6. maximum duty cycle (d max ) vs. t a figure 7. operating supply current (i op ) vs. t a figure 8. start threshold voltage (v start ) vs. t a figure 9. stop threshold voltage (v stop ) vs. t a -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 normalized temperature [c] -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 normalized temperature [c] -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 normalized temperature [c] -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 normalized temperature [c] -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 normalized temperature [c] -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 normalized temperature [c]
FSQ0170RNA, fsq0270rna, fs q0370rna green mode fairch ild power switch (fps?) ? 2006 fairchild semiconductor corporation www.fairchildsemi.com FSQ0170RNA, fsq0270rna, fsq0370rna rev. 1.0.1 8 typical performance characteristics (continued) these characteristic graphs are normalized at t a = 25c. figure 10. feedback source current (i fb ) vs. t a figure 11. start-up charging current (i ch ) vs. t a figure 12. peak current limit (i lim ) vs. t a -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 normalized temperature [c] -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 normalized temperature [c] -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 normalized temperature [c]
FSQ0170RNA, fsq0270rna, fs q0370rna green mode fairch ild power switch (fps?) ? 2006 fairchild semiconductor corporation www.fairchildsemi.com FSQ0170RNA, fsq0270rna, fsq0370rna rev. 1.0.1 9 functional description 1. startup: in previous generations of fairchild power switches (fps?), the v str pin required an external resistor to the dc input voltage line. in this generation, the startup resistor is replaced by an internal high- voltage current source and a switch that shuts off 10ms after the supply voltage, v cc , goes above 12v. the source turns back on if v cc drops below 8v. figure 13. high-voltage current source 2. feedback control: the 700v fps series employs current-mode control, as sh own in figure 14. an opto- coupler (such as the h11a817a) and shunt regulator (such as the ka431) are typica lly used to implement the feedback network. comparing the feedback voltage with the voltage across the r sense resistor of sensefet, plus an offset voltage, makes it possible to control the switching duty cycle. when the shunt regulator reference pin voltage exceeds the internal reference voltage of 2.5v, the opto-coupler led current increases, the feedback voltage v fb is pulled down and thereby reduces the duty cycle. this typically happens when the input voltage increases or the output load decreases. figure 14. pulse width modulation circuit 3. leading edge blanking (leb): when the internal sensefet is turned on, the primary-side capacitance and secondary-side rectifier diode reverse recovery typically cause a high-current spike through the sensefet. excessive voltage across the r sense resistor leads to incorrect feedback operation in the current- mode pwm control. to counter this effect, the fps employs a leading edge blanking (leb) circuit. this circuit inhibits the pwm comparator for a short time (t leb ) after the sense fet is turned on. 4. protection circuits: the fps has several protective functions, such as overload protection (olp), over- voltage protection (ovp), under-voltage lockout (uvlo), and thermal shutdown (tsd). because these protection circuits are fully integrated in the ic without external components, reliability is improved without increasing cost. once a faul t condition occurs, switching is terminated and the sensefet remains off. this causes v cc to fall. when v cc reaches the uvlo stop voltage, v stop (typically 8v), the protection is reset and the internal high-voltage cu rrent source charges the v cc capacitor via the v str pin. when v cc reaches the uvlo start voltage, v start (typically 12v), the fps resumes its normal operation. in this manner, the auto-restart can alternately enable and disable the switching of the power sensefet until the fault condition is eliminated. 4.1 overload protection (olp): overload is defined as the load current exceeding a pre-set level due to an unexpected event. in this situ ation, the protection circuit should be activated to protect the smps. however, even when the smps is operating normally, the olp circuit can be activated during the load transition. to avoid this undesired operation, the olp circuit is designed to be activated after a specified time to determine whether it is a transient situation or a true overload situation. in conjunction with the i pk current limit pin (if used), the current mode feedback path limits the current in the sensefet when the maximum pwm duty cycle is attained. if the output consumes more than this maximum power, the output voltage (v o ) decreases below nominal voltage. this reduces the current through the opto-coupler led, wh ich also reduces the opto- coupler transistor current, th us increasing the feedback voltage (v fb ). if v fb exceeds 3v, the feedback input diode is blocked and the 5a current source (i delay ) starts to slowly charge c fb up to v cc . in this condition, v fb increases until it reaches 6v, when the switching operation is terminated, as shown in figure 15. the shutdown delay time is the time required to charge c fb from 3v to 6v with 5a current source. figure 15. overload protection (olp) v in ,dc v str v cc 10ms after v cc 12v uvlo off v cc <8v uvlo on i str j-fet i ch fsq0x70rna rev. 1.00 3 osc v cc 5 a 900 a v sd r 2.5r gate driver olp d1 d2 v fb 431 c fb v o + - v fb,in v cc fsq0x70rna rev. 1.00 fb 21 12 1 2 () () ; 5 ,()3,()6 fb delay delay vt vt t c i avt vvt v i ? ==== v fb t 3v 6v overload protection t 12 = c fb (v(t 2 )-v(t 1 )) / i delay t 1 t 2 fsq0x70rna rev.00
FSQ0170RNA, fsq0270rna, fs q0370rna green mode fairch ild power switch (fps?) ? 2006 fairchild semiconductor corporation www.fairchildsemi.com FSQ0170RNA, fsq0270rna, fsq0370rna rev. 1.0.1 10 4.2 thermal shutdown (tsd) : the sensefet and the control ic are integrated, maki ng it easier for the control ic to detect the temperature of the sensefet. when the temperature exceeds approximately 140 c, thermal shutdown is activated. 4.3 over-voltage protection (ovp): in the event of a malfunction in the secondary-s ide feedback circuit, or an open feedback loop caused by a soldering defect, the current through the opto-coupler transistor becomes almost zero (see figure 14). v fb climbs up in a similar manner to the overload sit uation, forcing the preset maximum current to be supplied to the smps until the overload protection is activated. because excess energy is provided to the output, the output voltage may exceed the rated voltage before the overload protection is activated, resulting in the breakdown of the devices in the secondary side. to prevent this situation, an over- voltage protection (ovp) circuit is employed. in general, v cc is proportional to the output voltage and the fps uses v cc instead of directly monitoring the output voltage. if v cc exceeds 19v, the ovp circuit is activated, resulting in termination of the switching operation. to avoid undesired activation of ovp during normal operation, v cc should be designed to be below 19v. 5. soft-start : the fps has an internal soft-start circuit that slowly increa ses the sensefet current after start- up, as shown in figure 16. the typical soft-start time is 10ms, where progressive increments of the sensefet current are allowed during the start-up phase. the pulse width to the power switching device is progressively increased to establish the correct working conditions for transformers, inductors, an d capacitors. the voltage on the output capacitors is progressively increased to smoothly establish the requir ed output voltage. this also helps prevent transformer saturation and reduces the stress on the secondary diode during startup. figure 16. soft-start function 6. burst operation: to minimize power dissipation in standby mode, the fps ent ers burst-mode operation. feedback voltage decreases as the load decreases, as shown in figure 17, and the device automatically enters burst-mode when the feedback voltage drops below v burh (typically 600mv). switching continues until the feedback voltage drops below v burl (typically 400mv). at this point, switching stops and the output voltage starts to drop at a rate dependent on the standby current load. this causes the feedback voltage to rise. once it passes v burh , switching resumes. the feedback voltage then falls and the process is repeated. burst- mode operation alternately enables and disables switching of the sensefet and reduces switching loss in standby mode. figure 17. burst operation function 7. adjusting peak current limit: as shown in figure 18, a combined 2.8k internal resistance is connected to the non-inverting lead on the pwm comparator. an external resistance of rx on the current limit pin forms a parallel resistance with the 2.8k when the internal diodes are biased by the main current source of 900a. figure 18. peak current limit adjustment for example, fsq0270rna has a typical sensefet peak current limit (i lim ) of 0.9a. i lim can be adjusted to 0.6a by inserting rx between the i pk pin and the ground. the value of the rx can be estimated by the following equations: 0.9a: 0.6a = 2.8k : xk , x = rx || 2.8k where x represents the resistance of the parallel network. drain gnd r sense #6,7,8 #1 i lim 5v fsq0x70rna rev. 1.00 v burh switching off current waveform burst operation normal operation v fb v burl switching off burst operation fsq0x70rna rev.00 3 v cc i delay i fb 2k ? v fb pwm comparator 4 i pk 0.8k ? rx sensefet current sense 900 a 5 a v cc fsq0x70rna rev. 1.00
FSQ0170RNA, fsq0270rna, fs q0370rna green mode fairch ild power switch (fps?) ? 2006 fairchild semiconductor corporation www.fairchildsemi.com FSQ0170RNA, fsq0270rna, fsq0370rna rev. 1.0.1 11 application information methods of reducing audible noise switching-mode power converters have electronic and magnetic components, which generate audible noise when the operating frequency is in the range of 20~20,000hz. even though t hey operate above 20khz, they can make noise, depending on the load condition. the following sections discuss methods to reduce noise. glue or varnish the most common method of reducing noise involves using glue or varnish to tighten magnetic components. the motion of core, bobbin, and coil and the chattering or magnetostriction of core can cause the transformer to produce audible noise. the use of rigid glue and varnish helps reduce the transformer noise. glue or varnish can also can crack the core because sudden changes in the ambient temperature cause the core and the glue to expand or shrink in a different ratio. ceramic capacitor using a film capacitor instead of a ceramic capacitor as a snubber capacitor is another noise reduction solution. some dielectric materials show a piezoelectric effect, depending on the electric field intensity. hence, a snubber capacitor becomes one of the most significant sources of audible noise. another possibility is to use a zener clamp circuit instead of an rcd snubber for higher efficiency as well as lower audible noise. adjusting sound frequency moving the fundamental frequency of noise out of the 2~4khz range is the thir d method. generally, humans are more sensitive to noise in the range of 2~4khz. when the fundamental frequency of noise is located in this range, the noise sounds louder although the noise intensity level is identical (see figure 19). when the fps acts in burst mode and the burst operation is suspected to be a source of noise, this method may be helpful. if the frequency of burst mode operation lies in the range of 2~4khz, adjusting the feedback loop can shift the burst operation frequency. to reduce the burst operatio n frequency, increase a feedback gain capacitor (c f ), opto-coupler supply resistor (r d ); and feedback capacitor (c b ), and decrease a feedback gain resistor (r f ), as shown in figure 20. figure 19. equal loudness curves figure 20. typical feedback network of fps other reference materials an-4134: design guidelines for off-line forward converters using fairchild power switch (fps?) an-4137: design guidelines for off-line flyback converters using fairchild power switch (fps?) an-4140: transformer design consideration for off-line flyback converters using fa irchild power switch (fps?) an-4141: troubleshooting and design tips for fairchild power switch (fps?) flyback applications an-4147: design guidelines for rcd snubber of flyback an-4148: audible noise reduction techniques for fps? applications
FSQ0170RNA, fsq0270rna, fs q0370rna green mode fairch ild power switch (fps?) ? 2006 fairchild semiconductor corporation www.fairchildsemi.com FSQ0170RNA, fsq0270rna, fsq0370rna rev. 1.0.1 12 typical application circuit features ? high efficiency (> 78% at 115 v ac and 230 v ac input) ? low standby mode power consumption (< 0.8w at 230 v ac input and 0.5w load) ? enhanced system reliability through various protection functions ? internal soft-start (10ms) ? line uvlo function can be achieved using external component key design notes ? the delay time for overload protection is designed to be about 30ms with c8 of 47nf. if faster/slower triggering of olp is required, c8 can be changed to a sma ller/larger value (e.g. 100nf for about 60ms). ? zp1, dl1, rl1, rl2, rl3, rl4, r l5, rl7, ql1, ql2, and cl9 build a line under-voltage lockout block (uvlo). the zener voltage of zp1 determines the input voltage t hat makes fps turn on. rl5 and dl1 provide a reference voltage from v cc . if the input voltage divided by rl1, rl2, and rl 4 is lower than the zener voltage of dl1, ql1 and ql2 turn on and pull down v fb to ground. ? an evaluation board and correspondi ng test report can be provided. 1. schematic figure 21. demo circuit application output power input voltage output voltage (max. current) pc auxiliary power supply (using fsq0270rna) 15w universal input (85-265 v ac ) 5v (3a) c9 1000 f 16v c5 470 f 10v r13 open j1 fb j4 0 ql2 ksp2222a dl1 1n5233b rl3 1k rl5 30k rl1 1m rl2 1m zd1 1n4745 rl4 120k ds1 1n4007 r10 2 r11 1.2k 1% 7 j2 0 zr1 80 9, rl7 40k rs1 9 ql1 ksp2907a r12 open cs1 1.5nf cl9 10 f 50v j3 open c8 47nf c1 2.2nf ac250v r14 30 c2 22 f 400v c3 22 f 400v c4 1000 f 16v gnd 1 v cc 2 fb 3 i pk 4 drain 8 drain 7 drain 6 v str 5 u3 fsq0270rna 1 2 3 con1 input d2 1n4007 d3 1n4007 d4 1n4007 d5 1n4007 r6 2.4 1w l1 330 h l3 0 r2 4.7k r8 open 1 6, 3 10 4 5 t1 ee2229 d1 sb540 1 2 u1a fod817a c10 1nf 250v l2 1 h 2 3 1 u2 tl431a r5 1.25k 1% r4 100 r3 560 r9 10k c6 47nf 1 2 con2 output d6 1n4007 c7 47 f 25v 3 4 u1b fod817a zds1 p6ke180a zp1 1n4762 zd2 open fsq0x70rna rev. 1.12
FSQ0170RNA, fsq0270rna, fs q0370rna green mode fairch ild power switch (fps?) ? 2006 fairchild semiconductor corporation www.fairchildsemi.com FSQ0170RNA, fsq0270rna, fsq0370rna rev. 1.0.1 13 2. transformer figure 22. transformer schematic diagram 3. winding specification 4. electrical characteristics 5. core & bobbin ? core: ee2229 (material: pl-7, ae = 35.7 mm 2 ) ? bobbin: be2229 pin (s f) wire turns winding method n p /2 3 20.3 ? 1 72 solenoid winding insulation: polyester tape t = 0.025mm, 1 layers n a 4 50.25 ? 2 22 solenoid winding insulation: polyester tape t = 0.025mm, 2 layers n 5v 6, 7 9, 10 0.65 ? 2 8 solenoid winding insulation: polyester tape t = 0.025mm, 2 layers n p /2 2 10.3 ? 1 72 solenoid winding insulation: polyester tape t = 0.025mm, 2 layers pin specification remark inductance 1?3 1.20mh 5% 100khz, 1v leakage 1?3 < 30h max short all other pins ee2229 n 5v n a 1 2 3 4 5 6, 7 9, 10 np/2 np/2 fsq0x70rna rev. 1.00
FSQ0170RNA, fsq0270rna, fs q0370rna green mode fairch ild power switch (fps?) ? 2006 fairchild semiconductor corporation www.fairchildsemi.com FSQ0170RNA, fsq0270rna, fsq0370rna rev. 1.0.1 14 6. demo circuit part list part number value quantity d escription (manufacturer) c6, c8 47nf 2 ceramic capacitor c1 2.2nf (1kv) 1 ac cerami c capacitor(x1 & y1) c10 1nf (200v) 1 mylar capacitor cs1 1.5nf (50v) 1 ceramic capacitor c2, c3 22f (400v) 2 low impedance electrolytic capacitor kmx series c4, c9 1000f (16v) 2 low esr electrolytic capacitor nxc series c5 470f (10v) 1 low esr electrolytic capacitor nxc series c7 47f (25v) 1 general electrolytic capacitor cl9 10f (50v) 1 general electrolytic capacitor l1 330h 1 inductor l2 1h 1 inductor r6 2.4 (1w) 1 fusible resistor j1, j2, j4, l3 0 4 jumper r2 4.7k 1resistor r3 560 1resistor r4 100 1resistor r5 1.25k 1resistor r11 1.2k 1resistor r9 10k 1resistor r10 2 1resistor r14 30 1resistor rl3 1k 1resistor rl1, rl2 1m 2resistor rl4 120k 1resistor rl5 30k 1resistor rl7 40k 1resistor rs1 9 1resistor zr1 80 1resistor u1 fod817a 1 ic (fairchild semiconductor) u2 tl431 1 ic (fairchild semiconductor) u3 fsq0270rna 1 ic (fairchild semiconductor) ql1 2n2907 1 ic (fairchild semiconductor) ql2 2n2222 1 ic (fairchild semiconductor) d2, d3, d4, d5, d6, ds1 1n4007 6 diode (fairchild semiconductor) d1 sb540 1 schottky diode (fairchild semiconductor) zd1 1n4745 1 zener diode (fairchild semiconductor) dl1 1n5233 1 zener diode (fairchild semiconductor) zp1 82v (1w) 1 zener diode (fairchild semiconductor) zds1 p6ke180a 1 tvs (fairc hild semiconductor)
FSQ0170RNA, fsq0270rna, fs q0370rna green mode fairch ild power switch (fps?) ? 2006 fairchild semiconductor corporation www.fairchildsemi.com FSQ0170RNA, fsq0270rna, fsq0370rna rev. 1.0.1 15 7. layout figure 23. top image of pcb figure 24. bottom image of pcb
FSQ0170RNA, fsq0270rna, fs q0370rna green mode fairch ild power switch (fps?) ? 2006 fairchild semiconductor corporation www.fairchildsemi.com FSQ0170RNA, fsq0270rna, fsq0370rna rev. 1.0.1 16 package dimensions 8-dip dimensions are in millimeter s unless otherwise noted. figure 25. 8-lead dual in-line package (dip) september 1999, rev b 6.40 0.20 3.30 0.30 0.130 0.012 3.40 0.20 0.134 0.008 #1 #4 #5 #8 0.252 0.008 9.20 0.20 0.79 2.54 0.100 0.031 () 0.46 0.10 0.018 0.004 0.060 0.004 1.524 0.10 0.362 0.008 9.60 0.378 max 5.08 0.200 0.33 0.013 7.62 0~15 0.300 max min 0.25 +0.10 ?.05 0.010 +0.004 ?.002 8dip_dim.pdf
FSQ0170RNA, fsq0270rna, fs q0370rna green mode fairch ild power switch (fps?) ? 2006 fairchild semiconductor corporation www.fairchildsemi.com FSQ0170RNA, fsq0270rna, fsq0370rna rev. 1.0.1 17 fairchild semiconductor trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves th e right to make changes without further notice to any products herein to improve reliability, function, or design. fa irchild does not assume any li ability arising out of the application or use of any product or circuit described herein; neithe r does it convey any license under its patent rights, nor the rights of others. the se specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically th e warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as criti cal components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devi ces or systems which, (a) are intended for surgical implant into the body, or (b) su pport or sustain life, or (c) whose failure to perform when properly used in acco rdance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms rev. i22 acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact ? fast ? fastr? fps? frfet? fact quiet series? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? scalarpump? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinyboost? tinybuck? tinypwm? tinypower? tinylogic ? tinyopto? trutranslation? uhc ? unifet? vcx? wire? across the board. around the world.? the power franchise ? programmable active droop? datasheet identification product status definition advance information formative or in design this da tasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production this da tasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only.

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